Effect of InGaZnO Solution Concentration on the Electrical Properties of Drop-Cast Oxide Thin-Film Transistors

Morphological Influence of Solution-Processed Zinc Oxide Films on Electrical Characteristics of Thin-Film Transistors

We report on the morphological influence of solution-processed zinc oxide (ZnO) semiconductor films on the electrical characteristics of ZnO thin-film transistors (TFTs). Different film morphologies were produced by controlling the spin-coating condition of a precursor solution, and the ZnO films were analyzed using atomic force microscopy, X-ray diffraction, X-ray photoemission spectroscopy, a...

Current stress instability analysis of amorphous InGaZnO thin film transistors

1. Introduction Recent researches from the demands of large size liquid crystal flat panel displays, low cost process and higher performance arouse great interest on amorphous oxide semiconductor based thin-film transistors (TFTs) as an alternative of a-Si TFTs. To achieve device reliability and stability under various current/voltage bias, temperature, and light injections, various researches ...

Review of solution-processed oxide thin-film transistors

Influence of an anomalous dimension effect on thermal instability in amorphous- InGaZnO thin-film transistors

Articles you may be interested in Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping Appl. Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping ph...

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors.

The onset of inversion in the metal-oxide-semiconductor field-effect transistor (MOSFET) takes place when the surface potential is approximately twice the bulk potential. In contrast, the conduction threshold in accumulation mode transistors, such as the oxide thin film transistor (TFT), has remained ambiguous in view of the complex density of states distribution in the mobility gap. This paper...